? semiconductor components industries, llc, 2014 february, 2014 ? rev. 6 1 publication order number: msr860/d msr860g, MSRF860G switch-mode soft recovery power rectifiers plastic to ? 220 package these state ? of ? the ? art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching power supplies. features ? soft recovery with guaranteed low reverse recovery charge (q rr ) and peak reverse recovery current (i rrm ) ? 150 c operating junction temperature ? epoxy meets ul 94 v ? 0 @ 0.125 in ? low forward voltage ? low leakage current ? these are pb ? free devices mechanical characteristics: ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 600 v average rectified forward current (rated v r , t c = 125 c) i o 8.0 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 125 c) i frm 16 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 100 a storage/operating case temperature t stg , t c ? 65 to +150 c operating junction temperature t j ? 65 to +150 c thermal characteristics parameter symbol value unit msr860g thermal resistance, junction ? to ? case thermal resistance, junction ? to ? ambient r jc r ja 1.6 72.8 c/w MSRF860G thermal resistance, junction ? to ? case thermal resistance, junction ? to ? ambient r jc r ja 4.75 75 c/w stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. device package shipping ordering information to ? 220ac case 221b style 1 3 4 1 soft recovery power rectifier 8.0 amperes, 600 volts 1 3 4 http://onsemi.com msr860g to ? 220ac (pb ? free) 50 units / rail marking diagrams a = assembly location y = year ww = work week g = pb ? free package ka = diode polarity ay wwg msr860 ka ay wwg msrf860 ka MSRF860G to ? 220fp (pb ? free) 50 units / rail to ? 220 fullpak case 221ag style 1 3 4 1
msr860g, MSRF860G http://onsemi.com 2 electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (i f = 8.0 a) (note 1) maximum typical v f t j = 25 c t j = 150 c v 1.7 1.4 1.3 1.1 maximum instantaneous reverse current (v r = 600 v) maximum typical i r t j = 25 c t j = 150 c a 10 2.0 1000 80 maximum reverse recovery time (note 2) (v r = 400 v, i f = 8.0 a, di/dt = 200 a/ s) maximum typical t rr t j = 25 c t j = 125 c ns 120 95 190 125 typical recovery softness factor (v r = 400 v, i f = 8.0 a, di/dt = 200 a/ s) s = t b /t a 2.5 3.0 maximum peak reverse recovery current (v r = 400 v, i f = 8.0 a, di/dt = 200 a/ s) i rrm 5.8 8.3 a maximum reverse recovery charge (v r = 400 v, i f = 8.0 a, di/dt = 200 a/ s) q rr 350 700 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width 380 s, duty cycle 2% 2. t rr measured projecting from 25% of i rrm to zero current typical electrical characteristics figure 1. typical forward voltage i f , instantaneous forward current (amps) v r , reverse voltage (volts) figure 2. typical reverse current v f , forward voltage drop (volts) t c , case temperature ( c) figure 3. current derating, case 100 10 600 400 300 200 100 100 10 1 1.9 1.3 0.9 0.5 1 160 120 40 0 2 4 6 14 0 i r , reverse current ( a) i f(av) , average forward current (amps) 500 0.1 10 8 12 t j = 150 c 100 c 25 c rated v r applied 80 dc square wave 1.7 1.1 0.7 1.5 t j = 150 c 100 c 25 c 125 c
msr860g, MSRF860G http://onsemi.com 3 typical electrical characteristics t a , ambient temperature ( c) figure 4. current derating, ambient i f(av) , average forward current (amps) figure 5. power dissipation 160 120 40 0 3.0 2.5 2.0 1.5 1.0 0.5 0 14 8 4 0 16 14 12 10 2 0 i f(av) , average forward current (amps) p f(av) , average power dissipation (watts) 4 6 8 80 rated v r applied dc square wave 6 212 10 t j = 150 c dc square wave t figure 6. typical reverse recovery time figure 7. typical reverse recovery time di f /dt (a/ s) t di f /dt (a/ s) 100 500 160 20 0 , reverse recovery time (ns) rr 100 50 0 100 200 i figure 8. typical peak reverse recovery current figure 9. typical peak reverse recovery current di f /dt (a/ s) i di f /dt (a/ s) 100 200 500 8 4 0 , peak reverse recovery current (amps) rrm 14 2 0 100 140 120 100 80 60 40 200 300 400 300 400 500 150 200 250 200 300 400 500 4 6 8 10 12 300 400 , reverse recovery time (ns) rr i f = 16 a 8 a 4 a t j = 25 c v r = 400 v i f = 16 a 8 a 4 a t j = 125 c v r = 400 v 6 2 , peak reverse recovery current (amps) rrm i f = 16 a 8 a 4 a t j = 25 c v r = 400 v i f = 16 a 8 a 4 a t j = 125 c v r = 400 v
msr860g, MSRF860G http://onsemi.com 4 typical electrical characteristics q figure 10. typical reverse recovery charge figure 11. typical reverse recovery charge di f /dt (a/ s) di f /dt (a/ s) 100 300 500 200 100 0 700 200 0 100 200 300 400 500 400 200 300 250 150 350 50 , reverse recovery charge (nc) rr i f = 16 a 8 a 4 a t j = 25 c v r = 400 v i f = 16 a 8 a 4 a t j = 125 c v r = 400 v 400 300 500 100 600 900 800 q , reverse recovery charge (nc) rr e figure 12. typical switching off losses figure 13. typical switching off losses di f /dt (a/ s) dl f /dt (a/ s) 100 90 10 0 100 50 0 100 200 300 400 500 20 30 40 50 60 70 80 , switching off losses ( j) off 200 300 400 500 i f = 16 a 8 a 4 a t j = 25 c v r = 400 v 200 150 250 i f = 16 a 8 a 4 a t j = 125 c v r = 400 v e , switching off losses ( j) off figure 14. thermal response (msr860) t, time (ms) 0.1 1.0 0.01 1.0 10 100 1000 0.1 r(t), transient thermal response 0.01 (normalized) z jc (t) = r(t) r jc r jc = 1.6 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.1 0.05 0.01 single pulse
msr860g, MSRF860G http://onsemi.com 5 figure 15. thermal response, (msrf860) junction ? to ? case (r jc ) t, time (s) 0.1 10 0.001 1.0 10 100 1000 0.1 0.000001 z jc (t) = r(t) r jc r jc = 1.6 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 1.0 0.01 0.01 0.001 0.0001 0.00001 r(t), transient thermal response (normalized) ( c/w) figure 16. thermal response, (msrf860) junction ? to ? ambient (r ja ) t, time (s) 0.1 100 0.001 1.0 10 100 1000 0.1 0.000001 z jc (t) = r(t) r jc r jc = 1.6 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 1.0 0.01 0.01 0.001 0.0001 0.00001 r(t), transient thermal response (normalized) ( c/w) 10
msr860g, MSRF860G http://onsemi.com 6 package dimensions to ? 220 two ? lead case 221b ? 04 issue f style 1: pin 1. cathode 2. n/a 3. anode 4. cathode b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.039 0.64 1.00 f 0.142 0.161 3.61 4.09 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f to ? 220 fullpak, 2 ? lead case 221ag issue a style 1: pin 1. cathode 2. n/a 3. anode dim min max millimeters d 14.22 15.88 e 9.65 10.67 a 4.30 4.70 b 0.54 0.84 p 3.00 3.40 e l1 --- 2.80 c 0.49 0.79 l 12.70 14.73 b2 1.10 1.40 q 2.80 3.20 a2 2.50 2.90 a1 2.50 2.90 h1 5.97 6.48 e q l1 b2 e d l p 123 4 b seating plane a a1 h1 a2 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area. 4. dimensions d and e do not include mold flash and gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be measured at outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.00. 2.54 bsc m 0.14 m a a b c e/2 m 0.25 m a b 3x c 3x b note 3 e1 5.08 bsc e1 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 msr860/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
